{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264565","patent":{"patent_number":"US-11264565","title":"Magnetoresistance effect element and magnetic memory","assignee":null,"inventors":[],"filing_date":"2020-04-08T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":64,"abstract":"An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor Δ by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer.The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n−1)−number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n−1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistance effect element and magnetic memory","description":"An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor Δ by dec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11264565","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11264565","citation_suggestion":"Patentable. \"Magnetoresistance effect element and magnetic memory\" (US-11264565). https://patentable.app/patents/US-11264565","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11264565","json":"https://patentable.app/api/llm-context/US-11264565","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:19:37.240Z"}