{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11264899","patent":{"patent_number":"US-11264899","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-01-17T00:00:00.000Z","publication_date":"2022-03-01T00:00:00.000Z","cpc_codes":["H02M","H02M","H02M","H02M"],"num_claims":13,"abstract":"A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by Vth, a maximum rated gate voltage of the normally-off transistor is denoted by Vg_max, a voltage of the fourth end portion is denoted by Vg_on, the first capacitance component is denoted by Ca, and the second capacitance component is denoted by Cb, Vth<(Cb/(Ca+Cb))Vg_on