{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11270057","patent":{"patent_number":"US-11270057","title":"Semiconductor device including regions for reducing density gradient effect and method of forming the same","assignee":null,"inventors":[],"filing_date":"2020-08-12T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["G06F","G06F","G06F","G06F"],"num_claims":20,"abstract":"A method includes: generating a design layout according to a circuit design by placing first and second components; identifying a first area and a second area between the first component and the second component; and determining a first cell configuration of the first component according to the first component and a second cell configuration of the second component according to the second component. The method further includes selecting a first cell comprising a first capacitor from a cell library, wherein the first cell has a third cell configuration identical to the first cell configuration; selecting a second cell comprising a second capacitor from the cell library, wherein the second cell has a fourth cell configuration identical to the second cell configuration; placing a first cell array formed of the first cell in the first area; and placing a second cell array formed of the second cell in the second area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including regions for reducing density gradient effect and method of forming the same","description":"A method includes: generating a design layout according to a circuit design by placing first and second components; identifying a first area and a second area between the first component and the secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11270057","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11270057","citation_suggestion":"Patentable. \"Semiconductor device including regions for reducing density gradient effect and method of forming the same\" (US-11270057). https://patentable.app/patents/US-11270057","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11270057","json":"https://patentable.app/api/llm-context/US-11270057","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:19:47.206Z"}