{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11270891","patent":{"patent_number":"US-11270891","title":"Method for making self-aligned double pattern","assignee":null,"inventors":[],"filing_date":"2020-08-19T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"The disclosure provides a method for making a self-aligned double pattern, A silicon substrate with a first oxide layer, an amorphous silicon layer and an organic layer, etching the organic layer and the amorphous silicon layer, and covering them with a first silicon nitride layer; remove the first silicon nitride layer in the amorphous silicon pattern, forming first silicon nitride sidewall patterns on the amorphous silicon pattern's sidewalls; removing the amorphous silicon pattern between the first silicon nitride sidewall patterns; defining the morphology of a fin field-effect transistor, form core patterns and covering them with a thin silicon nitride layer; depositing a second oxide layer; defining the fin field-effect transistor's height, and etching back the second oxide layer till the height of the core patterns satisfies the defined fin field-effect transistor height; removing the thin silicon nitride layer, depositing a third oxide layer to cover the core patterns."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for making self-aligned double pattern","description":"The disclosure provides a method for making a self-aligned double pattern, A silicon substrate with a first oxide layer, an amorphous silicon layer and an organic layer, etching the organic layer and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11270891","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11270891","citation_suggestion":"Patentable. \"Method for making self-aligned double pattern\" (US-11270891). https://patentable.app/patents/US-11270891","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11270891","json":"https://patentable.app/api/llm-context/US-11270891","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:12.728Z"}