{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11270893","patent":{"patent_number":"US-11270893","title":"Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures","assignee":null,"inventors":[],"filing_date":"2019-04-08T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-based film formed over a substrate with a mask patterned over the poly-granular metal-based film. The method also includes applying a source power to generate a background plasma from the background gas, and providing a flow of a modifying gas while maintaining the flow of the background gas to generate a modifying plasma that produces a surface modification region with a substantially uniform depth in the top surface of the poly-granular metal-based film exposed by the mask. The method further includes stopping the flow of the modifying gas while maintaining the flow of the background gas, and applying a biasing power to the substrate to remove the surface modification region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures","description":"A method for etching a poly-granular metal-based film includes providing a flow of a background gas in a plasma etching chamber containing a semiconductor structure including the poly-granular metal-b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11270893","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11270893","citation_suggestion":"Patentable. \"Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures\" (US-11270893). https://patentable.app/patents/US-11270893","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11270893","json":"https://patentable.app/api/llm-context/US-11270893","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:18:33.054Z"}