{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11270967","patent":{"patent_number":"US-11270967","title":"Method for manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-02-25T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"There is provided a method for manufacturing a semiconductor device comprising: forming a first organic insulating layer on a semiconductor region; forming a bump base film including an edge portion contacting with the first organic insulating layer; performing heat treatment of the bump base film; and forming a second organic insulating layer so as to cover the edge portion of the bump base film and the first organic insulating layer around the bump base film while contacting with the first organic insulating layer, the second organic insulating layer being provided with a first opening that exposes a surface of the bump base film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device and semiconductor device","description":"There is provided a method for manufacturing a semiconductor device comprising: forming a first organic insulating layer on a semiconductor region; forming a bump base film including an edge portion c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11270967","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11270967","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device and semiconductor device\" (US-11270967). https://patentable.app/patents/US-11270967","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11270967","json":"https://patentable.app/api/llm-context/US-11270967","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:45:46.863Z"}