{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271001","patent":{"patent_number":"US-11271001","title":"Semiconductor device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2019-08-08T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having a first region, a second region and a third region; forming a dielectric layer on the base substrate; forming a first mask layer on the dielectric layer in the second region; forming a second mask layer on sidewall surfaces of the first mask layer and on the dielectric layer in the second region; etching the dielectric layer in the first region and the third region using the first mask layer and the second mask layer as an etching mask to form a first trench in the first region and a first trench in the third region; removing the first mask; and etching the dielectric layer in the second region using the second mask layer as an etching mask to form a second trench in the dielectric layer in the second region. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method thereof","description":"Semiconductor devices and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having a first region, a second region and a third region; forming a die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271001","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271001","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method thereof\" (US-11271001). https://patentable.app/patents/US-11271001","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271001","json":"https://patentable.app/api/llm-context/US-11271001","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:21:52.947Z"}