{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271036","patent":{"patent_number":"US-11271036","title":"Memory device containing dual etch stop layers for selector elements and method of making the same","assignee":null,"inventors":[],"filing_date":"2020-06-24T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A refractory metal-containing etch stop layer, a ruthenium etch stop layer, and a conductive material layer can be sequentially formed over an electrode layer and a selector material layer. A sequence of anisotropic etch processes can be employed to etch the conductive material layer selective to the ruthenium etch stop layer, to etch the ruthenium etch stop layer selective to the refractory metal-containing etch stop layer, and to etch the refractory metal-containing etch stop layer within minimal overetch into the electrode layer. The selector material layer can be subsequently anisotropically etched without exposure to the plasma of etchant gases for etching the refractory metal-containing etch stop layer and the conductive material layer, which may include a fluorine-containing plasma that can damage the selector material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device containing dual etch stop layers for selector elements and method of making the same","description":"A refractory metal-containing etch stop layer, a ruthenium etch stop layer, and a conductive material layer can be sequentially formed over an electrode layer and a selector material layer. A sequence","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271036","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271036","citation_suggestion":"Patentable. \"Memory device containing dual etch stop layers for selector elements and method of making the same\" (US-11271036). https://patentable.app/patents/US-11271036","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271036","json":"https://patentable.app/api/llm-context/US-11271036","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:12:56.878Z"}