{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271077","patent":{"patent_number":"US-11271077","title":"Trap-rich layer in a high-resistivity semiconductor layer","assignee":null,"inventors":[],"filing_date":"2020-03-03T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Structures including electrical isolation and methods of forming a structure including electrical isolation. A semiconductor layer is formed over a semiconductor substrate and shallow trench isolation regions are formed in the semiconductor layer. The semiconductor layer includes single-crystal semiconductor material having an electrical resistivity that is greater than or equal to 1000 ohm-cm. The shallow trench isolation regions are arranged to surround a portion of the semiconductor layer to define an active device region. A polycrystalline layer is positioned in the semiconductor layer and extends laterally beneath the active device region and the shallow trench isolation regions that surround the active device region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trap-rich layer in a high-resistivity semiconductor layer","description":"Structures including electrical isolation and methods of forming a structure including electrical isolation. A semiconductor layer is formed over a semiconductor substrate and shallow trench isolation","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271077","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271077","citation_suggestion":"Patentable. \"Trap-rich layer in a high-resistivity semiconductor layer\" (US-11271077). https://patentable.app/patents/US-11271077","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271077","json":"https://patentable.app/api/llm-context/US-11271077","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:44:25.852Z"}