{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271091","patent":{"patent_number":"US-11271091","title":"Fin structure for vertical field effect transistor having two-dimensional shape in plan view","assignee":null,"inventors":[],"filing_date":"2020-01-29T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A method for manufacturing a fin structure for a vertical field effect transistor (VFET) includes: forming on a substrate mandrels having at least one first gap therebetween; forming first spacers on side surfaces of the mandrels such that at least one second gap, smaller than the first gap, is formed between the first spacers; forming a second spacer on side surfaces of the first spacers; removing the mandrels and the first spacers to leave the second spacer on the side surfaces of the first spacers; removing the second spacer, on the side surfaces of the first spacers, at a predetermined portion so that the remaining second spacer has a same two-dimensional (2D) shape as the fin structure; and removing a portion of the substrate, except below the remaining second spacer, and the remaining second spacer so that the substrate below the remaining second spacer forms the fin structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin structure for vertical field effect transistor having two-dimensional shape in plan view","description":"A method for manufacturing a fin structure for a vertical field effect transistor (VFET) includes: forming on a substrate mandrels having at least one first gap therebetween; forming first spacers on ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271091","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271091","citation_suggestion":"Patentable. \"Fin structure for vertical field effect transistor having two-dimensional shape in plan view\" (US-11271091). https://patentable.app/patents/US-11271091","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271091","json":"https://patentable.app/api/llm-context/US-11271091","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:32:32.170Z"}