{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271097","patent":{"patent_number":"US-11271097","title":"Cap oxidation for FinFET formation","assignee":null,"inventors":[],"filing_date":"2020-10-26T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cap oxidation for FinFET formation","description":"Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. T","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271097","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271097","citation_suggestion":"Patentable. \"Cap oxidation for FinFET formation\" (US-11271097). https://patentable.app/patents/US-11271097","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271097","json":"https://patentable.app/api/llm-context/US-11271097","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:37:19.573Z"}