{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271109","patent":{"patent_number":"US-11271109","title":"Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-08-31T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same","description":"A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271109","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271109","citation_suggestion":"Patentable. \"Silicon metal-oxide-semiconductor field effect transistor (Si MOSFET) with a wide-bandgap III-V compound semiconductor group drain and method for fabricating the same\" (US-11271109). https://patentable.app/patents/US-11271109","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271109","json":"https://patentable.app/api/llm-context/US-11271109","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:03.384Z"}