{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271112","patent":{"patent_number":"US-11271112","title":"Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact","assignee":null,"inventors":[],"filing_date":"2019-10-24T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a FinFET device structure is provided. The method includes forming a fin structure over a substrate and forming a gate dielectric layer over the fin structure. The method also includes forming a gate electrode layer over the gate dielectric layer and forming a source/drain (S/D) structure adjacent to the gate electrode layer. In addition, the method includes forming an S/D contact structure over the S/D structure. The method also includes forming a first conductive layer in direct with the gate electrode layer. A bottom surface of the first conductive layer is lower than a top surface of the gate dielectric layer. The method further includes forming a second conductive layer over the first conductive layer. The gate electrode layer is electrically connected to the second conductive layer by the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact","description":"A method for forming a FinFET device structure is provided. The method includes forming a fin structure over a substrate and forming a gate dielectric layer over the fin structure. The method also inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271112","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271112","citation_suggestion":"Patentable. \"Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact\" (US-11271112). https://patentable.app/patents/US-11271112","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271112","json":"https://patentable.app/api/llm-context/US-11271112","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:57:34.433Z"}