{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271114","patent":{"patent_number":"US-11271114","title":"Strained gate semiconductor device with oxygen-doped interlayer dielectric material","assignee":null,"inventors":[],"filing_date":"2020-06-01T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material. The ILD further includes a second portion doped with a large species material, wherein the second portion includes a first sidewall substantially perpendicular to a top surface of the substrate, and the second portion includes a second sidewall having a positive angle with respect to the first sidewall."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Strained gate semiconductor device with oxygen-doped interlayer dielectric material","description":"A semiconductor device includes a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271114","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271114","citation_suggestion":"Patentable. \"Strained gate semiconductor device with oxygen-doped interlayer dielectric material\" (US-11271114). https://patentable.app/patents/US-11271114","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271114","json":"https://patentable.app/api/llm-context/US-11271114","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:53:21.618Z"}