{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271116","patent":{"patent_number":"US-11271116","title":"Vertical thin film transistor","assignee":null,"inventors":[],"filing_date":"2019-10-25T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["G06N","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor device includes a stack of layers stacked vertically and including a source layer, a drain layer and a channel layer between the source layer and the drain layer. A gate electrode is formed in a common plane with the channel layer and a gate dielectric is formed vertically between the gate electrode and the channel layer. A first contact contacts the stack of layers on a first side of the stack of layers, and a second contact formed on an opposite side vertically from the first contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical thin film transistor","description":"A semiconductor device includes a stack of layers stacked vertically and including a source layer, a drain layer and a channel layer between the source layer and the drain layer. A gate electrode is f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271116","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271116","citation_suggestion":"Patentable. \"Vertical thin film transistor\" (US-11271116). https://patentable.app/patents/US-11271116","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271116","json":"https://patentable.app/api/llm-context/US-11271116","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:49:20.101Z"}