{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271117","patent":{"patent_number":"US-11271117","title":"Stacked high-blocking III-V power semiconductor diode","assignee":null,"inventors":[],"filing_date":"2020-03-04T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A stacked high-blocking III-V power semiconductor diode, with a p+ or n+ substrate layer, a p− layer, an n− region with a layer thickness of 10 μm-150 μm, and an n+ or p+ layer, wherein all layers comprise a GaAs compound, a first metallic contact layer and a second metallic contact layer and a hard mask layer with at least one seed opening, wherein the hard mask layer is integrally bonded to the substrate layer or integrally bonded to the p− layer, the n− region extends within the seed opening and over an edge region, adjacent to the seed opening, of a top side of the hard mask layer and the n− region within the seed opening is integrally bonded to the p− layer or to the n+ substrate layer and in the edge region of the top side of the hard mask layer to the hard mask layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stacked high-blocking III-V power semiconductor diode","description":"A stacked high-blocking III-V power semiconductor diode, with a p+ or n+ substrate layer, a p− layer, an n− region with a layer thickness of 10 μm-150 μm, and an n+ or p+ layer, wherein all layers com","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271117","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271117","citation_suggestion":"Patentable. \"Stacked high-blocking III-V power semiconductor diode\" (US-11271117). https://patentable.app/patents/US-11271117","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271117","json":"https://patentable.app/api/llm-context/US-11271117","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:57:26.943Z"}