{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271118","patent":{"patent_number":"US-11271118","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-07-29T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device including a silicon carbide semiconductor substrate having a first-conductivity-type region at its first main surface. The semiconductor device has, at the first main surface, a plurality of first second-conductivity-type regions and a second second-conductivity-type region selectively provided in the first-conductivity-type region, respectively in an active region and a connecting region of the semiconductor device, and an oxide film provided in a termination region of the semiconductor device and having an inner end that faces the active region. A first silicide film is in ohmic contact with the first second-conductivity-type regions. A second silicide film is in contact with the inner end of the oxide film and in ohmic contact with the second second-conductivity-type region. The semiconductor device has a first electrode including a titanium film and a metal electrode film stacked sequentially on the first main surface, and a second electrode provided at a second main surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A semiconductor device including a silicon carbide semiconductor substrate having a first-conductivity-type region at its first main surface. The semiconductor device has, at the first main surface, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271118","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271118","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11271118). https://patentable.app/patents/US-11271118","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271118","json":"https://patentable.app/api/llm-context/US-11271118","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:09:24.662Z"}