{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271149","patent":{"patent_number":"US-11271149","title":"Precessional spin current structure with nonmagnetic insertion layer for MRAM","assignee":null,"inventors":[],"filing_date":"2020-03-17T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":3,"abstract":"A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic structure in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer a first and second precessional spin current ferromagnetic layer separated by a nonmagnetic precessional spin current insertion layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Precessional spin current structure with nonmagnetic insertion layer for MRAM","description":"A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271149","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271149","citation_suggestion":"Patentable. \"Precessional spin current structure with nonmagnetic insertion layer for MRAM\" (US-11271149). https://patentable.app/patents/US-11271149","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271149","json":"https://patentable.app/api/llm-context/US-11271149","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:15:03.988Z"}