{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11271155","patent":{"patent_number":"US-11271155","title":"Suppressing oxidation of silicon germanium selenium arsenide material","assignee":null,"inventors":[],"filing_date":"2020-03-10T00:00:00.000Z","publication_date":"2022-03-08T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":12,"abstract":"An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Suppressing oxidation of silicon germanium selenium arsenide material","description":"An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of wat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11271155","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11271155","citation_suggestion":"Patentable. \"Suppressing oxidation of silicon germanium selenium arsenide material\" (US-11271155). https://patentable.app/patents/US-11271155","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11271155","json":"https://patentable.app/api/llm-context/US-11271155","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:32:10.057Z"}