{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276447","patent":{"patent_number":"US-11276447","title":"Spin current magnetoresistance effect element and magnetic memory","assignee":null,"inventors":[],"filing_date":"2018-07-24T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":7,"abstract":"A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin current magnetoresistance effect element and magnetic memory","description":"A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the mag","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276447","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276447","citation_suggestion":"Patentable. \"Spin current magnetoresistance effect element and magnetic memory\" (US-11276447). https://patentable.app/patents/US-11276447","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276447","json":"https://patentable.app/api/llm-context/US-11276447","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:27:58.088Z"}