{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276570","patent":{"patent_number":"US-11276570","title":"Multi-layer deposition and treatment of silicon nitride films","assignee":null,"inventors":[],"filing_date":"2020-07-22T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-layer deposition and treatment of silicon nitride films","description":"Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276570","citation_suggestion":"Patentable. \"Multi-layer deposition and treatment of silicon nitride films\" (US-11276570). https://patentable.app/patents/US-11276570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276570","json":"https://patentable.app/api/llm-context/US-11276570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:43:19.177Z"}