{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276576","patent":{"patent_number":"US-11276576","title":"Gate metal patterning to avoid gate stack attack due to excessive wet etching","assignee":null,"inventors":[],"filing_date":"2019-11-12T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","B82Y","H01L"],"num_claims":18,"abstract":"A method of forming gate structures to a nanosheet device that includes forming at least two stacks of nanosheets, wherein each nanosheet includes a channel region portion having a gate dielectric layer present thereon. The method may further include forming a dual metal layer scheme on the gate dielectric layer of each nanosheet. The dual metal layer scheme including an etch stop layer of a first composition and a work function adjusting layer of a second composition, wherein the etch stop layer has a composition that provides that the work function adjusting layer is removable by a wet etch chemistry that is selective to the etch stop layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate metal patterning to avoid gate stack attack due to excessive wet etching","description":"A method of forming gate structures to a nanosheet device that includes forming at least two stacks of nanosheets, wherein each nanosheet includes a channel region portion having a gate dielectric lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276576","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276576","citation_suggestion":"Patentable. \"Gate metal patterning to avoid gate stack attack due to excessive wet etching\" (US-11276576). https://patentable.app/patents/US-11276576","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276576","json":"https://patentable.app/api/llm-context/US-11276576","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:33:21.489Z"}