{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276578","patent":{"patent_number":"US-11276578","title":"Semiconductor device with fin isolation","assignee":null,"inventors":[],"filing_date":"2020-09-11T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A first semiconductor fin and a second semiconductor fin are disposed over a substrate. The second semiconductor fin and the first semiconductor fin are aligned substantially along a same line and spaced apart from each other. The first semiconductor fin has a first end portion, the second semiconductor fin has a second end portion, and an end sidewall of the first end portion and is spaced apart from an end sidewall of the second end portion. The gate structure extends substantially perpendicularly to the first semiconductor fin. When viewed from above, the gate structure overlaps with the first end portion of the first semiconductor fin. When viewed from above, the end sidewall of the first end portion of the first semiconductor fin facing the end sidewall of the second end portion of the second semiconductor fin has a re-entrant profile."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with fin isolation","description":"A first semiconductor fin and a second semiconductor fin are disposed over a substrate. The second semiconductor fin and the first semiconductor fin are aligned substantially along a same line and spa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276578","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276578","citation_suggestion":"Patentable. \"Semiconductor device with fin isolation\" (US-11276578). https://patentable.app/patents/US-11276578","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276578","json":"https://patentable.app/api/llm-context/US-11276578","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:41:52.539Z"}