{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276638","patent":{"patent_number":"US-11276638","title":"Back end of line via to metal line margin improvement","assignee":null,"inventors":[],"filing_date":"2019-11-07T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a first conductive line and a second conductive line in a first dielectric layer, and a third conductive line in a second dielectric layer overlying the first dielectric layer. The first conductive line and the second conductive line each extend along a first direction. The third conductive line extends along a second direction different from the first direction and above at least the second conductive line. The semiconductor structure further includes a via in the second dielectric layer and electrically connecting the second conductive line and the third conductive line. The via lands on a portion of the second conductive line. The semiconductor structure further includes a dielectric cap over the first conductive line. A bottom surface of the dielectric cap is below a top surface of the first dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Back end of line via to metal line margin improvement","description":"A semiconductor structure includes a first conductive line and a second conductive line in a first dielectric layer, and a third conductive line in a second dielectric layer overlying the first dielec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276638","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276638","citation_suggestion":"Patentable. \"Back end of line via to metal line margin improvement\" (US-11276638). https://patentable.app/patents/US-11276638","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276638","json":"https://patentable.app/api/llm-context/US-11276638","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:05.704Z"}