{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276670","patent":{"patent_number":"US-11276670","title":"Semiconductor device and manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-04-17T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method of semiconductor device","description":"A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top sur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276670","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method of semiconductor device\" (US-11276670). https://patentable.app/patents/US-11276670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276670","json":"https://patentable.app/api/llm-context/US-11276670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:19:41.452Z"}