{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276671","patent":{"patent_number":"US-11276671","title":"Multilayered memory device with through-silicon via(TSV), semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-11-23T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A memory device, a semiconductor device and their manufacturing methods are provided. One of the methods may include: providing a first die and a plurality of second dies, the first die having a first pad, each of the plurality of second dies having a second pad; stacking the plurality of second dies on the first die, the second pads and the first pad arranged in a stepwise manner, and projections of the second pads of any two adjacent second dies on the first die partially overlapped; forming a connecting hole passing through the second dies; and forming a conductive body filling the connecting hole and connecting the first pad and the second pads. This method simplifies the manufacturing process of a semiconductor device, reduces the cost thereof, and improves the production yield."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilayered memory device with through-silicon via(TSV), semiconductor device and method for manufacturing the same","description":"A memory device, a semiconductor device and their manufacturing methods are provided. One of the methods may include: providing a first die and a plurality of second dies, the first die having a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276671","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276671","citation_suggestion":"Patentable. \"Multilayered memory device with through-silicon via(TSV), semiconductor device and method for manufacturing the same\" (US-11276671). https://patentable.app/patents/US-11276671","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276671","json":"https://patentable.app/api/llm-context/US-11276671","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:56:08.032Z"}