{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276693","patent":{"patent_number":"US-11276693","title":"FinFET device having flat-top epitaxial features and method of making the same","assignee":null,"inventors":[],"filing_date":"2018-07-27T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A semiconductor device and method of forming the same are disclosed. The method of forming a semiconductor device includes providing a substrate, an isolation structure over the substrate, and at least two fins extending from the substrate and through the isolation structure; etching the at least two fins, thereby forming at least two trenches; growing first epitaxial features in the at least two trenches; growing second epitaxial features over the first epitaxial features in a first growth condition; and after the second epitaxial features reach a target critical dimension, growing the second epitaxial features in a second growth condition different from the first growth condition."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device having flat-top epitaxial features and method of making the same","description":"A semiconductor device and method of forming the same are disclosed. The method of forming a semiconductor device includes providing a substrate, an isolation structure over the substrate, and at leas","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276693","citation_suggestion":"Patentable. \"FinFET device having flat-top epitaxial features and method of making the same\" (US-11276693). https://patentable.app/patents/US-11276693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276693","json":"https://patentable.app/api/llm-context/US-11276693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:32:57.493Z"}