{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276732","patent":{"patent_number":"US-11276732","title":"Semiconductor memory devices formed using selective barrier metal removal","assignee":null,"inventors":[],"filing_date":"2019-09-20T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor memory device includes depositing a bottom metal line layer on a dielectric layer, and patterning the bottom metal line layer into a plurality of bottom metal lines spaced apart from each other. In the method, a plurality of switching element dielectric portions are formed on respective ones of the plurality of bottom metal lines, and a top metal line layer is deposited on the plurality of switching element dielectric portions. The method further includes patterning the top metal line layer into a plurality of top metal lines spaced apart from each other. The plurality of top metal lines are oriented perpendicular to the plurality of bottom metal lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory devices formed using selective barrier metal removal","description":"A method for manufacturing a semiconductor memory device includes depositing a bottom metal line layer on a dielectric layer, and patterning the bottom metal line layer into a plurality of bottom meta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276732","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276732","citation_suggestion":"Patentable. \"Semiconductor memory devices formed using selective barrier metal removal\" (US-11276732). https://patentable.app/patents/US-11276732","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276732","json":"https://patentable.app/api/llm-context/US-11276732","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:13:07.910Z"}