{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276754","patent":{"patent_number":"US-11276754","title":"Semiconductor device including trench structure and manufacturing method","assignee":null,"inventors":[],"filing_date":"2020-03-06T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"An embodiment of a semiconductor device includes a silicon carbide semiconductor body including source and body regions of opposite conductivity types. A trench structure extends from a first surface into the silicon carbide semiconductor body along a vertical direction, and includes a gate electrode and a gate dielectric. A contact is electrically connected to the source region at the first surface. The source region includes a first source sub-region directly adjoining the contact at a source contact area of the first surface, a second source sub-region, and a third source sub-region. The second sub-region is arranged between the first and third sub-regions along the vertical direction. A doping concentration profile along the vertical direction of the source region includes a doping concentration minimum in the second sub-region and a doping concentration maximum in the third sub-region. Each of the second and third sub-regions overlaps with the source contact area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including trench structure and manufacturing method","description":"An embodiment of a semiconductor device includes a silicon carbide semiconductor body including source and body regions of opposite conductivity types. A trench structure extends from a first surface ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276754","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276754","citation_suggestion":"Patentable. \"Semiconductor device including trench structure and manufacturing method\" (US-11276754). https://patentable.app/patents/US-11276754","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276754","json":"https://patentable.app/api/llm-context/US-11276754","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:47.069Z"}