{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276757","patent":{"patent_number":"US-11276757","title":"Silicon carbide semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-11-06T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":5,"abstract":"A silicon carbide semiconductor device includes an insulated-gate electrode structure that is formed inside a gate trench that goes through a base region and reaches a upper portion of a current transport layer to control a primary current flowing through the base region; a current suppression layer of the second conductivity type embedded within an upper portion of the current transport layer; a control electrode isolation insulating film filled into a control electrode isolation trench that goes through the base region and reaches an upper portion of the current suppression layer; and a control electrode pad disposed on the control electrode isolation insulating film, wherein an upper portion of the current suppression layer abuts a sidewall of the control electrode isolation insulating film, and a lower portion of the current suppression layer covers at least bottom corners of the control electrode isolation insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing the same","description":"A silicon carbide semiconductor device includes an insulated-gate electrode structure that is formed inside a gate trench that goes through a base region and reaches a upper portion of a current trans","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276757","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276757","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing the same\" (US-11276757). https://patentable.app/patents/US-11276757","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276757","json":"https://patentable.app/api/llm-context/US-11276757","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:16:27.457Z"}