{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276769","patent":{"patent_number":"US-11276769","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-06-27T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"A method of manufacturing a semiconductor device may include: forming a fin-shaped structure on a substrate; forming a supporting layer on the substrate having the fin-shaped structure formed thereon, and patterning the supporting layer into a supporting portion extending from a surface of the substrate to a surface of the fin-shaped structure and thus physically connecting them; removing a portion of the fin-shaped structure close to the substrate to form a first semiconductor layer spaced apart from the substrate; growing a second semiconductor layer with the first semiconductor layer as a seed layer; and in at least a fraction of the longitudinal extent, removing the first semiconductor layer, and cutting off the second semiconductor layer on sides of the first semiconductor layer away from the substrate and close to the substrate, respectively, so that the cut-off second semiconductor layer acts as a fin of the device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A method of manufacturing a semiconductor device may include: forming a fin-shaped structure on a substrate; forming a supporting layer on the substrate having the fin-shaped structure formed thereon,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276769","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276769","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-11276769). https://patentable.app/patents/US-11276769","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276769","json":"https://patentable.app/api/llm-context/US-11276769","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:14:45.592Z"}