{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276779","patent":{"patent_number":"US-11276779","title":"Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit","assignee":null,"inventors":[],"filing_date":"2020-09-08T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":26,"abstract":"A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openings extending therethrough. Each of these openings has eight (or more) sidewalls, including a first plurality of sidewalls that are flat relative to a center of the opening and second plurality of sidewalls that are either flat or concave relative to the center of the opening. A source electrode is also provided, which extends into the openings. This source electrode may ohmically contact a source region within the semiconductor substrate. If the field effect transistor is a JBSFET, the source electrode may also form a Schottky rectifying junction with a drift region within the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit","description":"A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276779","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276779","citation_suggestion":"Patentable. \"Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit\" (US-11276779). https://patentable.app/patents/US-11276779","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276779","json":"https://patentable.app/api/llm-context/US-11276779","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:02:17.033Z"}