{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11276800","patent":{"patent_number":"US-11276800","title":"Method of manufacturing light emitting diodes and light emitting diode","assignee":null,"inventors":[],"filing_date":"2018-03-13T00:00:00.000Z","publication_date":"2022-03-15T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":18,"abstract":"A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm−2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing light emitting diodes and light emitting diode","description":"A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ult","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11276800","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11276800","citation_suggestion":"Patentable. \"Method of manufacturing light emitting diodes and light emitting diode\" (US-11276800). https://patentable.app/patents/US-11276800","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11276800","json":"https://patentable.app/api/llm-context/US-11276800","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:15:12.375Z"}