{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282558","patent":{"patent_number":"US-11282558","title":"Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines","assignee":null,"inventors":[],"filing_date":"2020-05-21T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":26,"abstract":"Embodiments of the present disclosure relate to an architecture for random access memory (RAM) circuit configurations. For example, certain embodiments relate to a ferroelectric RAM (FRAM) read only memory (ROM) wordline architecture. A method for power-on reset of a memory can include powering on the memory. The method can also include reading a first flag in a first bit of a first configuration wordline of the memory, wherein the first configuration wordline is one of a plurality of redundant configuration wordlines. The method can further include reading, when the first flag indicates the first configuration wordline is valid, a predetermined number of bytes of the wordline. The method can additionally include configuring operations of the memory based on the predetermined number of bytes, when the first flag indicates the first configuration wordline is valid."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines","description":"Embodiments of the present disclosure relate to an architecture for random access memory (RAM) circuit configurations. For example, certain embodiments relate to a ferroelectric RAM (FRAM) read only m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282558","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282558","citation_suggestion":"Patentable. \"Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines\" (US-11282558). https://patentable.app/patents/US-11282558","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282558","json":"https://patentable.app/api/llm-context/US-11282558","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:32:22.770Z"}