{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282559","patent":{"patent_number":"US-11282559","title":"Memory device","assignee":null,"inventors":[],"filing_date":"2021-03-15T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"According to one embodiment, a memory device includes: a third layer between first and a second layers above a substrate; a pillar being adjacent to the first to third layers and including a ferroelectric layer; a memory cell between the third layer and the pillar; and a circuit which executes a first operation for a programming, a second operation for an erasing using a first voltage, and a third operation of applying a second voltage between the third layer and the pillar. The first voltage has a first potential difference, the second voltage has a second potential difference smaller than the first potential difference. A potential of the third conductive layer is lower than a potential of the pillar in each of the first and second voltages. The third operation is executed between the first operation and the second operation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device","description":"According to one embodiment, a memory device includes: a third layer between first and a second layers above a substrate; a pillar being adjacent to the first to third layers and including a ferroelec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282559","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282559","citation_suggestion":"Patentable. \"Memory device\" (US-11282559). https://patentable.app/patents/US-11282559","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282559","json":"https://patentable.app/api/llm-context/US-11282559","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:13:06.767Z"}