{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282768","patent":{"patent_number":"US-11282768","title":"Fully-aligned top-via structures with top-via trim","assignee":null,"inventors":[],"filing_date":"2019-11-08T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method is presented for constructing fully-aligned top-via interconnects by employing a subtractive etch process. The method includes building a first metallization stack over a substrate, depositing a first lithography stack over the first metallization stack, etching the first lithography stack and the first metallization stack to form a receded first metallization stack, and depositing a first dielectric adjacent the receded first metallization stack. The method further includes building a second metallization stack over the first dielectric and the receded first metallization stack, depositing a second lithography stack over the second metallization stack, etching the second lithography stack and the second metallization stack to form a receded second metallization stack, and trimming the receded first metallization stack to form a via connecting the receded first metallization stack to the receded second metallization stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fully-aligned top-via structures with top-via trim","description":"A method is presented for constructing fully-aligned top-via interconnects by employing a subtractive etch process. The method includes building a first metallization stack over a substrate, depositin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282768","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282768","citation_suggestion":"Patentable. \"Fully-aligned top-via structures with top-via trim\" (US-11282768). https://patentable.app/patents/US-11282768","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282768","json":"https://patentable.app/api/llm-context/US-11282768","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:15:46.445Z"}