{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282788","patent":{"patent_number":"US-11282788","title":"Interconnect and memory structures formed in the BEOL","assignee":null,"inventors":[],"filing_date":"2019-07-25T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A structure (interconnect or memory structure) is provided that includes a first electrically conductive structure having a concave upper surface embedded in a first interconnect dielectric material layer. A metal-containing cap having a convex bottom surface directly contacts the concave upper surface of the first electrically conductive structure. A metal-containing structure having a planar bottommost surface directly contacts a planar topmost surface of the metal-containing cap. A second electrically conductive structure contacts the planar topmost surface of the metal-containing structure. A second interconnect dielectric material layer is present on the first interconnect dielectric material layer and is located laterally adjacent to an upper portion of the metal-containing cap, the metal-containing structure, and the second electrically conductive structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interconnect and memory structures formed in the BEOL","description":"A structure (interconnect or memory structure) is provided that includes a first electrically conductive structure having a concave upper surface embedded in a first interconnect dielectric material l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282788","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282788","citation_suggestion":"Patentable. \"Interconnect and memory structures formed in the BEOL\" (US-11282788). https://patentable.app/patents/US-11282788","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282788","json":"https://patentable.app/api/llm-context/US-11282788","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:16:45.952Z"}