{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282827","patent":{"patent_number":"US-11282827","title":"Nonvolatile memory device having stacked structure with spaced apart conductive layers","assignee":null,"inventors":[],"filing_date":"2020-07-27T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A nonvolatile memory device includes a memory cell region including first metal pads, and a peripheral circuit region including second metal pads. The memory cell region includes a vertical structure including pairs of a first insulating layer and a first conductive layer, a second insulating layer on the vertical structure, a second conductive layer and a third conductive layer spaced apart from each other on the second insulating layer, first vertical channels and second vertical channels. The second conductive layer and the third conductive layer are connected with a first through via penetrating the vertical structure and a region of the second insulating layer that is exposed between the second conductive layer and the third conductive layer. The peripheral circuit region is vertically connected to the memory cell region by the first metal pads and the second metal pads directly."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device having stacked structure with spaced apart conductive layers","description":"A nonvolatile memory device includes a memory cell region including first metal pads, and a peripheral circuit region including second metal pads. The memory cell region includes a vertical structure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282827","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282827","citation_suggestion":"Patentable. \"Nonvolatile memory device having stacked structure with spaced apart conductive layers\" (US-11282827). https://patentable.app/patents/US-11282827","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282827","json":"https://patentable.app/api/llm-context/US-11282827","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:52:28.861Z"}