{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282843","patent":{"patent_number":"US-11282843","title":"Memory device, SRAM cell, and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-07-30T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a first semiconductor fin, a second semiconductor fin, first source/drain features, second source/drain features, a first gate structure, a second gate structure, a first vertical-gate-all-around (VGAA) transistor, and a second VGAA transistor. The first semiconductor fin and the second semiconductor fin are adjacent to each other. The first source/drain features are on opposite sides of the first semiconductor fin. The second source/drain features are on opposite sides of the second semiconductor fin. The first gate structure is over the first semiconductor fin. The second gate structure is over the second semiconductor fin. The first VGAA transistor is over one of the first source/drain features. The second VGAA transistor is over one of the second source/drain features."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device, SRAM cell, and manufacturing method thereof","description":"A device includes a first semiconductor fin, a second semiconductor fin, first source/drain features, second source/drain features, a first gate structure, a second gate structure, a first vertical-ga","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282843","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282843","citation_suggestion":"Patentable. \"Memory device, SRAM cell, and manufacturing method thereof\" (US-11282843). https://patentable.app/patents/US-11282843","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282843","json":"https://patentable.app/api/llm-context/US-11282843","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:52:31.894Z"}