{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282850","patent":{"patent_number":"US-11282850","title":"Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen","assignee":null,"inventors":[],"filing_date":"2019-09-09T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen","description":"A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semicon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282850","citation_suggestion":"Patentable. \"Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen\" (US-11282850). https://patentable.app/patents/US-11282850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282850","json":"https://patentable.app/api/llm-context/US-11282850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:38:17.147Z"}