{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282851","patent":{"patent_number":"US-11282851","title":"Vertical capacitor structure and non-volatile memory device including the same","assignee":null,"inventors":[],"filing_date":"2019-10-24T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A non-volatile memory device includes a substrate, a memory cell string including a vertical channel structure and memory cells, a voltage generator including a first transistor and configured to provide various voltages to the memory cells, and a vertical capacitor structure. The vertical capacitor structure includes first and second active patterns apart from each other in a first horizontal direction, a first gate pattern located above a channel region between the first and second active patterns, a first gate insulating film between the first gate pattern and the substrate in a vertical direction, and capacitor electrodes each extending in the vertical direction. The first transistor includes a second gate pattern and a second gate insulating film between the second gate pattern and the substrate in the vertical direction. The first gate insulating film has a thickness greater than a thickness of the second gate insulating film in the vertical direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical capacitor structure and non-volatile memory device including the same","description":"A non-volatile memory device includes a substrate, a memory cell string including a vertical channel structure and memory cells, a voltage generator including a first transistor and configured to prov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282851","citation_suggestion":"Patentable. \"Vertical capacitor structure and non-volatile memory device including the same\" (US-11282851). https://patentable.app/patents/US-11282851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282851","json":"https://patentable.app/api/llm-context/US-11282851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:25:53.735Z"}