{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282859","patent":{"patent_number":"US-11282859","title":"Semiconductor circuit with metal structure and manufacturing method","assignee":null,"inventors":[],"filing_date":"2020-08-24T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The semiconductor structure includes a semiconductor substrate having active regions; field-effect devices disposed on the semiconductor substrate, the field-effect devices including gate stacks with elongated shape oriented in a first direction; a first metal layer disposed over the gate stacks, the first metal layer including first metal lines oriented in a second direction being orthogonal to the first direction; a second metal layer disposed over the first metal layer, the second metal layer including second metal lines oriented in the first direction; and a third metal layer disposed over the second metal layer, the third metal layer including third metal lines oriented in the second direction. The first, second, and third metal lines have a first thickness T1, a second thickness T2, and t a third thickness T3, respectively. The second thickness is greater than the first thickness and the third thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor circuit with metal structure and manufacturing method","description":"The semiconductor structure includes a semiconductor substrate having active regions; field-effect devices disposed on the semiconductor substrate, the field-effect devices including gate stacks with ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282859","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282859","citation_suggestion":"Patentable. \"Semiconductor circuit with metal structure and manufacturing method\" (US-11282859). https://patentable.app/patents/US-11282859","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282859","json":"https://patentable.app/api/llm-context/US-11282859","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:00:48.526Z"}