{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282926","patent":{"patent_number":"US-11282926","title":"Semiconductor device with a semiconductor body of silicon carbide","assignee":null,"inventors":[],"filing_date":"2020-03-10T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":22,"abstract":"A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is electrically contacted with a first surface of the SiC body and forms a pn junction with the second semiconductor area. The first and second semiconductor areas are arranged on one another in a vertical direction perpendicular to the first surface. The first semiconductor area has first and second dopant species. An average dopant concentration of the first dopant species in a first part of the first semiconductor area adjoining the first surface is greater than an average dopant concentration of the second dopant species. An average dopant concentration of the second dopant species in a second part of the first semiconductor area adjoining the second semiconductor area is greater than a dopant concentration of the first dopant species."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a semiconductor body of silicon carbide","description":"A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282926","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282926","citation_suggestion":"Patentable. \"Semiconductor device with a semiconductor body of silicon carbide\" (US-11282926). https://patentable.app/patents/US-11282926","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282926","json":"https://patentable.app/api/llm-context/US-11282926","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:29:30.905Z"}