{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282936","patent":{"patent_number":"US-11282936","title":"Horizontal gate all around device nanowire air gap spacer formation","assignee":null,"inventors":[],"filing_date":"2020-09-14T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["B82Y","H01L","B82Y","H01L"],"num_claims":20,"abstract":"Embodiments provide apparatuses and methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one embodiments, a nanowire structure is provided and includes a stack containing repeating pairs of a first layer and a second layer and having a first side and a second side opposite from the first side, a gate structure surrounding the stack, a source layer adjacent to the first side, and a drain layer adjacent to the second side. The stack also contains one or more gaps disposed between the source layer and the second layer and having a dielectric constant value of about 1 and one or more gaps disposed between the drain layer and the second layer and having a dielectric constant value of about 1."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Horizontal gate all around device nanowire air gap spacer formation","description":"Embodiments provide apparatuses and methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. I","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282936","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282936","citation_suggestion":"Patentable. \"Horizontal gate all around device nanowire air gap spacer formation\" (US-11282936). https://patentable.app/patents/US-11282936","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282936","json":"https://patentable.app/api/llm-context/US-11282936","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:26:18.596Z"}