{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282946","patent":{"patent_number":"US-11282946","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-03-31T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":24,"abstract":"A semiconductor device includes an enhancement mode MOSFET and a junction FET. The MOSFET has a first semiconductor substrate of a first conductivity type, a first first-semiconductor-layer of the first conductivity type, first second-semiconductor-regions of a second conductivity type, first first-semiconductor-regions of the first conductivity type, first gate insulating films, first gate electrodes, a first first-electrode, and a first second-electrode. The FET has a second semiconductor substrate of the first conductivity type, a second first-semiconductor-layer of the first conductivity type, second first-semiconductor-regions of the first conductivity type, a second second-semiconductor-layer of the second conductivity type, second gate electrodes, a second first-electrode, and a second second-electrode. The first second-electrode and the second second-electrode are connected electrically."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes an enhancement mode MOSFET and a junction FET. The MOSFET has a first semiconductor substrate of a first conductivity type, a first first-semiconductor-layer of the fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282946","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282946","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11282946). https://patentable.app/patents/US-11282946","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282946","json":"https://patentable.app/api/llm-context/US-11282946","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:14:54.188Z"}