{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282950","patent":{"patent_number":"US-11282950","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-05-31T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"Provided is a technology for obtaining a drain current of a sufficient magnitude in a field effect transistor using a nitride semiconductor. A channel layer that is Alx1Iny1Ga1-x1-y1N is formed on an upper surface of a semiconductor substrate, and on an upper surface of the channel layer, a barrier layer that is Alx2Iny2Ga1-x2-y2N having a band gap larger than that of the channel layer is formed. Then, on an upper surface of the barrier layer, a gate insulating film that is an insulator or a semiconductor and has a band gap larger than that of the barrier layer is at least partially formed, and a gate electrode is formed on an upper surface of the gate insulating film. Then, heat treatment is performed while a positive voltage is applied to the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"Provided is a technology for obtaining a drain current of a sufficient magnitude in a field effect transistor using a nitride semiconductor. A channel layer that is Alx1Iny1Ga1-x1-y1N is formed on an ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282950","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282950","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-11282950). https://patentable.app/patents/US-11282950","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282950","json":"https://patentable.app/api/llm-context/US-11282950","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:00:33.714Z"}