{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11282962","patent":{"patent_number":"US-11282962","title":"Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)","assignee":null,"inventors":[],"filing_date":"2020-04-06T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"A method of controlling threshold voltage shift that includes forming a first set of channel semiconductor regions on a first portion of a substrate, and forming a second set of channel semiconductor regions on a second portion of the substrate. A gate structure is formed on the first set of channel semiconductor regions and the second set of channel, wherein the gate structure extends from a first portion of the substrate over an isolation region to a second portion of the substrate. A gate cut region is formed in the gate structure over the isolation region. An oxygen scavenging metal containing layer is formed on sidewalls of the gate cut region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)","description":"A method of controlling threshold voltage shift that includes forming a first set of channel semiconductor regions on a first portion of a substrate, and forming a second set of channel semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11282962","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11282962","citation_suggestion":"Patentable. \"Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)\" (US-11282962). https://patentable.app/patents/US-11282962","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11282962","json":"https://patentable.app/api/llm-context/US-11282962","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:32:08.551Z"}