{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11283010","patent":{"patent_number":"US-11283010","title":"Precessional spin current structure for magnetic random access memory with novel capping materials","assignee":null,"inventors":[],"filing_date":"2018-09-07T00:00:00.000Z","publication_date":"2022-03-22T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":9,"abstract":"A magnetic memory element having a magnetic free layer and a magnetic reference layer with a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. A spin current layer (which may be a precessional spin current layer) is located adjacent to the magnetic free layer and is separated from the magnetic free layer by a non-magnetic coupling layer. A material layer adjacent to and in contact with the spin current layer, has a material composition and thickness that are chosen to provide a desired effective magnetization in the spin current layer. The material layer, which may be a capping layer or a seed layer, can be constructed of a material other than tantalum which may include one or more of Zr, Mo, Ru, Rh, Pd, Hf, W, Ir, Pt and/or alloys and/or nitrides of these elements."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Precessional spin current structure for magnetic random access memory with novel capping materials","description":"A magnetic memory element having a magnetic free layer and a magnetic reference layer with a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. A spin current","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11283010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11283010","citation_suggestion":"Patentable. \"Precessional spin current structure for magnetic random access memory with novel capping materials\" (US-11283010). https://patentable.app/patents/US-11283010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11283010","json":"https://patentable.app/api/llm-context/US-11283010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:31:33.260Z"}