{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11286566","patent":{"patent_number":"US-11286566","title":"Apparatus for deposition of a III-V semiconductor layer","assignee":null,"inventors":[],"filing_date":"2019-05-15T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatus for deposition of a III-V semiconductor layer","description":"A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plura","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11286566","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11286566","citation_suggestion":"Patentable. \"Apparatus for deposition of a III-V semiconductor layer\" (US-11286566). https://patentable.app/patents/US-11286566","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11286566","json":"https://patentable.app/api/llm-context/US-11286566","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:53:04.836Z"}