{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11287742","patent":{"patent_number":"US-11287742","title":"Composition for forming resist underlayer film having improved flattening properties","assignee":null,"inventors":[],"filing_date":"2018-06-22T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Composition for forming resist underlayer film having improved flattening properties","description":"A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11287742","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11287742","citation_suggestion":"Patentable. \"Composition for forming resist underlayer film having improved flattening properties\" (US-11287742). https://patentable.app/patents/US-11287742","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11287742","json":"https://patentable.app/api/llm-context/US-11287742","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:56:05.838Z"}